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IRF1010NPBF | INFINEON

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INFINEON IRF1010NPBF

Single N-Channel 55 V 11 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3


Ordering Info

In Stock: 600 Delivery

MOQ: 200

Package Quantity: 50

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
200-599 $0.8429
600+ $0.7867


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Electrical Characteristics

Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 250
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (Abs) (ID) 85
Drain Current-Max (ID) 85
Drain-source On Resistance-Max 0.011
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 180
Pulsed Drain Current-Max (IDM) 290
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON