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IRF1405SPBF | INFINEON

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INFINEON IRF1405SPBF

PowerField-EffectTransistor,90AI(D),60V,0.0038ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-252AA


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 50

Package Quantity: 50

Quantity Cost
50 -

Electrical Characteristics

Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 590
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (Abs) (ID) 131
Drain Current-Max (ID) 131
Drain-source On Resistance-Max 0.0053
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 200
Pulsed Drain Current-Max (IDM) 680
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON