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IRF2807PBF | INFINEON

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INFINEON IRF2807PBF

Single N-Channel 75 V 13 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3


Ordering Info

In Stock: 0

MOQ: 200

Package Quantity: 50

HTS Code: 8541.29.00

ECCN: EAR99

COO: MX

Quantity Cost
200 -

Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 340
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 75
Drain Current-Max (Abs) (ID) 82
Drain Current-Max (ID) 75
Drain-source On Resistance-Max 0.013
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230
Pulsed Drain Current-Max (IDM) 280
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON