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IRF3703PBF | INFINEON

INFINEON IRF3703PBF

Single N-Channel 30 V 2.8 mOhm 209 nC HEXFET® Power Mosfet - TO-220-3


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 1000

Package Quantity: 1000

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1000 -

Electrical Characteristics

Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 1700
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 210
Drain Current-Max (ID) 75
Drain-source On Resistance-Max 0.0039
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230
Pulsed Drain Current-Max (IDM) 1000
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON