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IRF4905PBF | INFINEON

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INFINEON IRF4905PBF

Single P-Channel 55 V 0.02 Ohm 180 nC HEXFET® Power Mosfet - TO-220-3


Ordering Info

In Stock: 138000 Delivery

MOQ: 1000

Package Quantity: 1000

HTS Code: 8541.29.0095

ECCN: N.E.

COO: CN

Subject to tariff fees.

Quantity Cost
1000-137999 $1.30
138000+ $1.21


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 930
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (Abs) (ID) 64
Drain Current-Max (ID) 74
Drain-source On Resistance-Max 0.02
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 150
Pulsed Drain Current-Max (IDM) 260
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON