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Learn more about ECAD Model here.Electrical Characteristics
Additional Feature | HIGH RELIABILITY |
Avalanche Energy Rating (Eas) | 185 |
Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 100 |
Drain Current-Max (Abs) (ID) | 33 |
Drain Current-Max (ID) | 33 |
Drain-source On Resistance-Max | 0.044 |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB |
JESD-30 Code | R-PSFM-T3 |
JESD-609 Code | e3 |
Number of Elements | 1 |
Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 |
Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR |
Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | 250 |
Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 130 |
Pulsed Drain Current-Max (IDM) | 110 |
Qualification Status | Not Qualified |
Sub Category | FET General Purpose Power |
Surface Mount | NO |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier |
Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
Transistor Element Material | SILICON |