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IRF630PBF | VISHAY/SILICONIX

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VISHAY/SILICONIX IRF630PBF

Single N-Channel 200 V 0.4 O 43 nC Power Mosfet - TO-220-3 (TO-220AB)


Ordering Info

In Stock: 8000 Delivery

MOQ: 250

Package Quantity: 50

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
250-7999 $0.6143
8000+ $0.5733


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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 250
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200
Drain Current-Max (Abs) (ID) 9
Drain Current-Max (ID) 9
Drain-source On Resistance-Max 0.4
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75
Pulsed Drain Current-Max (IDM) 36
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON