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IRF630PBF | VISHAY/SILICONIX

VISHAY/SILICONIX IRF630PBF

Single N-Channel 200 V 0.4 O 43 nC Power Mosfet - TO-220-3 (TO-220AB)


Ordering Info

In Stock: 0

MOQ: 250

Package Quantity: 50

HTS Code: 8541.29.00.55

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
250 -

Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 250
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200
Drain Current-Max (Abs) (ID) 9
Drain Current-Max (ID) 9
Drain-source On Resistance-Max 0.4
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 75
Pulsed Drain Current-Max (IDM) 36
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON