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Ordering Info
In Stock: 0
MOQ: 4800
Package Quantity: 4800
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 4800 | - |
Electrical Characteristics
| Avalanche Energy Rating (Eas) | 43 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 20 |
| Drain Current-Max (Abs) (ID) | 55 |
| Drain Current-Max (ID) | 16 |
| Drain-source On Resistance-Max | 0.0057 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-XBCC-N3 |
| JESD-609 Code | e1 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | CHIP CARRIER |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 42 |
| Pulsed Drain Current-Max (IDM) | 120 |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | YES |
| Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
| Terminal Form | NO LEAD |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |