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IRF7503TRPBF | INFINEON

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INFINEON IRF7503TRPBF

Dual N-Channel 30 V 0.222 Ohm 12 nC HEXFET® Power Mosfet - MICRO-8


Ordering Info

In Stock: 8000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
4000-7999 $0.2786
8000+ $0.26


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Electrical Characteristics

Additional Feature ULTRA LOW RESISTANCE
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (ID) 2.4
Drain-source On Resistance-Max 0.135
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 14
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON