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IRF7805PBF | INTERNATIONAL RECTIFIER

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INTERNATIONAL RECTIFIER IRF7805PBF

Power Field-Effect Transistor, 13AI(D),30V,0.011ohm, 1-Element,N-Channel,Silicon,Metal-oxide Semiconductor FET,MS-012AA


Ordering Info

In Stock: 0

MOQ: 8

Package Quantity: 8

Quantity Cost
8+ $1.08


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Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 13
Drain Current-Max (ID) 13
Drain-source On Resistance-Max 0.011
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5
Pulsed Drain Current-Max (IDM) 100
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON