Request Quote













Request Quote


IRF7855TRPBF | INFINEON

Download the free Library Loader to convert this file for your ECAD Tool.

Learn more about ECAD Model here.

INFINEON IRF7855TRPBF

Single N-Channel 60V 9.4 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8


Ordering Info

In Stock: 24000 Delivery

MOQ: 4000

Package Quantity: 4000

HTS Code: 8541.29.00

ECCN: EAR99

COO: TW

Quantity Cost
4000-23999 $0.9857
24000+ $0.92


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Avalanche Energy Rating (Eas) 540
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 12
Drain Current-Max (ID) 12
Drain-source On Resistance-Max 0.0094
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.5
Pulsed Drain Current-Max (IDM) 97
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON