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IRF840 | VISHAY

VISHAY IRF840

Power Field-Effect Transistor,8AI(D),500V,0.85ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB


Ordering Info

In Stock: 0

MOQ: 117

Package Quantity: 117

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Quantity Cost
117+ $2.45


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Electrical Characteristics

Avalanche Energy Rating (Eas) 510
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (Abs) (ID) 8
Drain Current-Max (ID) 8
Drain-source On Resistance-Max 0.85
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125
Pulsed Drain Current-Max (IDM) 32
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON