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IRF840ASPBF | VISHAY/SILICONIX

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VISHAY/SILICONIX IRF840ASPBF

Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3


Ordering Info

In Stock: 700 Delivery

MOQ: 150

Package Quantity: 50

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
150-699 $1.26
700+ $1.18


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Electrical Characteristics

Avalanche Energy Rating (Eas) 510
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (Abs) (ID) 8
Drain Current-Max (ID) 8
Drain-source On Resistance-Max 0.85
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1
Pulsed Drain Current-Max (IDM) 32
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON