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IRF840ASPBF | VISHAY/SILICONIX

VISHAY/SILICONIX IRF840ASPBF

Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3


Ordering Info

In Stock: 1100 Delivery

MOQ: 100

Package Quantity: 50

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
100-1099 $1.67
1100+ $1.54


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Electrical Characteristics

Avalanche Energy Rating (Eas) 510
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (Abs) (ID) 8
Drain Current-Max (ID) 8
Drain-source On Resistance-Max 0.85
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.1
Pulsed Drain Current-Max (IDM) 32
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON