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IRF9335TRPBF | INFINEON

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INFINEON IRF9335TRPBF

Single P-Channel 30 V 59 mOhm 9.1 nC HEXFET® Power Mosfet - SOIC-8


Ordering Info

In Stock: 16000 Delivery

MOQ: 4000

Package Quantity: 4000

ECCN: N.E.

COO: CN

Subject to tariff fees.

Quantity Cost
4000-15999 $0.3567
16000+ $0.3319


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Electrical Characteristics

Avalanche Energy Rating (Eas) 98
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 5.4
Drain Current-Max (ID) 5.4
Drain-source On Resistance-Max 0.059
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5
Pulsed Drain Current-Max (IDM) 43
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON