Request Quote













Request Quote


IRF9520 | VISHAY

VISHAY IRF9520

Power Field-Effect Transistor,6.8AI(D),100V,0.6ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB


Ordering Info

In Stock: 0

MOQ: 28

Package Quantity: 28

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
28+ $1.30


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 300
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 6.8
Drain Current-Max (ID) 6.8
Drain-source On Resistance-Max 0.6
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 60
Pulsed Drain Current-Max (IDM) 27
Sub Category Other Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON