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IRF9953TRPBF | INFINEON

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INFINEON IRF9953TRPBF


Ordering Info

In Stock: 0

MOQ: 4000

Package Quantity: 4000

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
4000 -

Electrical Characteristics

Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 57
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30
Drain Current-Max (Abs) (ID) 2.3
Drain Current-Max (ID) 2.3
Drain-source On Resistance-Max 0.25
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2
Pulsed Drain Current-Max (IDM) 10
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON