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Ordering Info

In Stock: 0

Package Quantity: 1

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Electrical Characteristics


Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	50
Drain Current-Max (Abs) (ID)	9.7
Drain Current-Max (ID)	9.7
Drain-source On Resistance-Max	0.28
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-220AB
JESD-30 Code	R-PSFM-T3
JESD-609 Code	e3
Number of Elements	1
Number of Terminals	3
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	150
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	40
Pulsed Drain Current-Max (IDM)	39
Qualification Status	Not Qualified
Sub Category	Other Transistors
Surface Mount	NO
Terminal Finish	Matte Tin (Sn)
Terminal Form	THROUGH-HOLE
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	40
Transistor Application	SWITCHING
Transistor Element Material	SILICON