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Ordering Info
In Stock: 109000 Delivery
MOQ: 1000
Package Quantity: 1000
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 1000-108999 | $1.92 |
| 109000+ | $1.77 |
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Electrical Characteristics
| Avalanche Energy Rating (Eas) | 200 |
| Case Connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 75 |
| Drain Current-Max (Abs) (ID) | 210 |
| Drain Current-Max (ID) | 120 |
| Drain-source On Resistance-Max | 0.0033 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-220AB |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 175 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL |
| Power Dissipation-Max (Abs) | 370 |
| Pulsed Drain Current-Max (IDM) | 850 |
| Qualification Status | Not Qualified |
| Sub Category | FET General Purpose Power |
| Surface Mount | NO |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |