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IRFB3306PBF | INFINEON

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INFINEON IRFB3306PBF

Single N-Channel 60 V 4.2 mOhm 85 nC HEXFET® Power Mosfet - TO-220-3


Ordering Info

In Stock: 1600 Delivery

MOQ: 200

Package Quantity: 50

HTS Code: 8541.29.00

ECCN: EAR99

COO: DE

Quantity Cost
200-1599 $0.75
1600+ $0.70


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Electrical Characteristics

Avalanche Energy Rating (Eas) 184
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 160
Drain Current-Max (ID) 160
Drain-source On Resistance-Max 0.0042
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230
Pulsed Drain Current-Max (IDM) 620
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON