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IRFB38N20DPBF | INFINEON

INFINEON IRFB38N20DPBF

Single N-Channel 200 V 0.054 Ohm 91 nC HEXFET® Power Mosfet - TO-220-3


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 161

Package Quantity: 1

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
161 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 460
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200
Drain Current-Max (Abs) (ID) 44
Drain Current-Max (ID) 43
Drain-source On Resistance-Max 0.054
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 320
Pulsed Drain Current-Max (IDM) 180
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON