Request Quote













Request Quote


IRFB4332PBF | INFINEON

INFINEON IRFB4332PBF

Single N-Channel 250 V 33 mOhm 99 nC HEXFET® Power Mosfet - TO-220-3


RoHS Compliant

Ordering Info

In Stock: 185000 Delivery

MOQ: 1000

Package Quantity: 1000

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1000-184999 $2.17
185000+ $2.01


Secure Payment Methods: Accepted Payment Methods:  Visa, Mastercard, American Express, Discovery Card PayPal accepted
Need more Info?

Electrical Characteristics

Avalanche Energy Rating (Eas) 230
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250
Drain Current-Max (Abs) (ID) 60
Drain Current-Max (ID) 60
Drain-source On Resistance-Max 0.033
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 390
Pulsed Drain Current-Max (IDM) 230
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON