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IRFD110PBF | VISHAY

VISHAY IRFD110PBF

Small Signal Field-EffectTransistor,1AI(D),100V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 0

MOQ: 986

Package Quantity: 986

ECCN: EAR99

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Quantity Cost
986+ $0.48


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Electrical Characteristics

Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 1
Drain Current-Max (ID) 1
Drain-source On Resistance-Max 0.54
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e4
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.3
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish Silver (Ag)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON