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IRFD9120PBF | VISHAY/SILICONIX

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VISHAY/SILICONIX IRFD9120PBF

Single P-Channel 100 V 0.6 Ohms Through Hole Power Mosfet - HVMDIP-4


Ordering Info

In Stock: 8900 Delivery

MOQ: 300

Package Quantity: 100

HTS Code: 8541.29.00

ECCN: EAR99

COO: PH

Quantity Cost
300-8899 $0.5929
8900+ $0.5533


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Electrical Characteristics

Avalanche Energy Rating (Eas) 140
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 1
Drain Current-Max (ID) 1
Drain-source On Resistance-Max 0.6
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T4
JESD-609 Code e3
Moisture Sensitivity Level NOT APPLICABLE
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT APPLICABLE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.3
Pulsed Drain Current-Max (IDM) 8
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT APPLICABLE
Transistor Application SWITCHING
Transistor Element Material SILICON