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Ordering Info
In Stock: 0
MOQ: 400
Package Quantity: 100
ECCN: N.E.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 400 | - |
Electrical Characteristics
| Configuration | SINGLE |
| DS Breakdown Voltage-Min | 200 |
| Drain Current-Max (Abs) (ID) | .58 |
| Drain Current-Max (ID) | .56 |
| Drain-source On Resistance-Max | 1.5 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDIP-T3 |
| JESD-609 Code | e3 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1 |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | NO |
| Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |