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IRFD9220PBF | VISHAY

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VISHAY IRFD9220PBF

PowerField-EffectTransistor,2.5AI(D),60V,0.1ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET


RoHS Compliant

Ordering Info

In Stock: 600 Delivery

MOQ: 200

Package Quantity: 100

ECCN: N.E.

Quantity Cost
200-599 $1.02
600+ $0.9528


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Electrical Characteristics

Configuration SINGLE
DS Breakdown Voltage-Min 200
Drain Current-Max (Abs) (ID) .58
Drain Current-Max (ID) .56
Drain-source On Resistance-Max 1.5
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON