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IRFIB6N60APBF | VISHAY

VISHAY IRFIB6N60APBF

Power Field-EffectTransistor,15AI(D),20V,0.0082ohm,1-Element,P-Channel,Silicon,Metal-oxideSemiconductor FET,MS-012AA


RoHS Compliant

Ordering Info

In Stock: 0

MOQ: 50

Package Quantity: 50

ECCN: EAR99

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
50 -

Electrical Characteristics

Avalanche Energy Rating (Eas) 290
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600
Drain Current-Max (Abs) (ID) 5.5
Drain Current-Max (ID) 5.5
Drain-source On Resistance-Max 0.75
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 60
Pulsed Drain Current-Max (IDM) 37
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON