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IRFR1018ETRPBF | INFINEON

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INFINEON IRFR1018ETRPBF

Single N-Channel 60 V 8.4 mOhm 69 nC HEXFET® Power Mosfet - TO-252-3


Ordering Info

In Stock: 8000 Delivery

MOQ: 2000

Package Quantity: 2000

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2000-7999 $0.7286
8000+ $0.68


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Electrical Characteristics

Avalanche Energy Rating (Eas) 88
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 79
Drain Current-Max (ID) 56
Drain-source On Resistance-Max 0.0084
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110
Pulsed Drain Current-Max (IDM) 315
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON