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IRFR4104TRPBF | INFINEON

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INFINEON IRFR4104TRPBF


Ordering Info

In Stock: 6000 Delivery

MOQ: 2000

Package Quantity: 2000

ECCN: N.E.

COO: CN

Subject to tariff fees.

Quantity Cost
2000-5999 $0.8761
6000+ $0.8153


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Electrical Characteristics

Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 145
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40
Drain Current-Max (Abs) (ID) 42
Drain Current-Max (ID) 42
Drain-source On Resistance-Max 0.0055
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140
Pulsed Drain Current-Max (IDM) 480
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON