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IRFU014PBF | VISHAY/SILICONIX

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VISHAY/SILICONIX IRFU014PBF

Single N-Channel 60 V 0.2 Ohms Through Hole Power Mosfet - IPAK (TO-251)


Ordering Info

In Stock: 2925 Delivery

MOQ: 300

Package Quantity: 75

HTS Code: 8541.29.00

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
300-2924 $0.4857
2925+ $0.4533


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Electrical Characteristics

Avalanche Energy Rating (Eas) 47
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60
Drain Current-Max (Abs) (ID) 7.7
Drain Current-Max (ID) 7.7
Drain-source On Resistance-Max 0.2
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25
Pulsed Drain Current-Max (IDM) 31
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON