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IRFU220NPBF | INFINEON

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INFINEON IRFU220NPBF

Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251


Ordering Info

In Stock: 3000 Delivery

MOQ: 3000

Package Quantity: 3000

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
3000+ $0.4774


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Electrical Characteristics

Avalanche Energy Rating (Eas) 46
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200
Drain Current-Max (Abs) (ID) 5
Drain Current-Max (ID) 5
Drain-source On Resistance-Max 0.6
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-251AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 43
Pulsed Drain Current-Max (IDM) 20
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON