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IRFZ24NPBF | INFINEON

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INFINEON IRFZ24NPBF

55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package


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In Stock: 0

Package Quantity: 100

COO: CN

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Electrical Characteristics

Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 71
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (Abs) (ID) 17
Drain Current-Max (ID) 17
Drain-source On Resistance-Max 0.07
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 45
Pulsed Drain Current-Max (IDM) 68
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON