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IRG6B330UDPBF | INFINEON

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INFINEON IRG6B330UDPBF

Insulated Gate Bipolar Transistor, 70AI(C),330VV(BR)CES, N-Channel, TO-220AB


Ordering Info

In Stock: 0

MOQ: 1

Package Quantity: 1

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Electrical Characteristics

Collector Current-Max (IC) 70
Collector-emitter Voltage-Max 330
Configuration SINGLE WITH BUILT-IN DIODE
Gate-emitter Thr Voltage-Max 5
Gate-emitter Voltage-Max 30
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 160
Qualification Status Not Qualified
Sub Category Insulated Gate BIP Transistors
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 411
Turn-on Time-Nom (ton) 83