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IRGS14C40LPBF | INFINEON

INFINEON IRGS14C40LPBF

InsulatedGateBipolarTransistor,45AI(C),1200VV(BR)CES,N-Channel,TO-247AC


Ordering Info

In Stock: 0

Package Quantity: 1000

COO: CN

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Electrical Characteristics

Additional Feature LOW SATURATION VOLTAGE
Collector Current-Max (IC) 20
Collector-emitter Voltage-Max 370
Configuration SINGLE WITH BUILT-IN DIODE AND RESISTOR
Gate-emitter Thr Voltage-Max 2.2
Gate-emitter Voltage-Max 12
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125
Qualification Status Not Qualified
Rise Time-Max (tr) 4000
Sub Category Insulated Gate BIP Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application AUTOMOTIVE IGNITION
Transistor Element Material SILICON
Turn-on Time-Nom (ton) 3700