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IRLD110PBF | VISHAY/SILICONIX

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VISHAY/SILICONIX IRLD110PBF

Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4


RoHS Compliant

Ordering Info

In Stock: 3500 Delivery

MOQ: 100

Package Quantity: 100

HTS Code: 100

ECCN: 8541.29.00

COO: PH

Quantity Cost
100+ $0.8268


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Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 1
Drain Current-Max (ID) 1
Drain-source On Resistance-Max 0.54
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.3
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON