Request Quote













Request Quote


IRLD110PBF | VISHAY

VISHAY IRLD110PBF

Small Signal Field-Effect Transistor, 1A I(D),100V,1-Element, N-Channel, Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 0

MOQ: 600

Package Quantity: 100

ECCN: EAR99

COO: PH

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
600 -

Electrical Characteristics

Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 1
Drain Current-Max (ID) 1
Drain-source On Resistance-Max 0.54
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.3
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON