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IRLD120PBF | VISHAY/SILICONIX

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VISHAY/SILICONIX IRLD120PBF

Single N-Channel 100 V 0.27 Ohms Through Hole Power Mosfet - HVMDIP-4


Ordering Info

In Stock: 5400 Delivery

MOQ: 200

Package Quantity: 100

HTS Code: 8541.29.00

ECCN: EAR99

COO: PH

Quantity Cost
200-5399 $0.95
5400+ $0.8867


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Electrical Characteristics

Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas) 690
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100
Drain Current-Max (Abs) (ID) 1.3
Drain Current-Max (ID) 1.3
Drain-source On Resistance-Max 0.27
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.3
Pulsed Drain Current-Max (IDM) 10
Qualification Status Not Qualified
Sub Category FET General Purpose Powers
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON