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IRLL014NTRPBF | INFINEON

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INFINEON IRLL014NTRPBF

Single N-Channel 55V 0.28 Ohm 14 nC HEXFET® Power Mosfet - SOT-223


RoHS Compliant

Ordering Info

In Stock: 420000 Delivery

MOQ: 2500

Package Quantity: 2500

ECCN: EAR99

COO: CN

Subject to tariff fees.

Quantity Cost
2500-419999 $0.2484
420000+ $0.2299


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Electrical Characteristics

Additional Feature AVALANCHE RATED, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 32
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55
Drain Current-Max (ID) 2
Drain-source On Resistance-Max 0.14
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 16
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON