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JANTXV2N6766 | INTERNATIONAL RECTIFIER

INTERNATIONAL RECTIFIER JANTXV2N6766


Ordering Info

In Stock: 13

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1-9 $12.95
10+ $11.15


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Electrical Characteristics

Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 60
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200
Drain Current-Max (Abs) (ID) 30
Drain Current-Max (ID) 30
Drain-source On Resistance-Max 0.09
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204
JESD-30 Code O-MBFM-P2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150
Pulsed Drain Current-Max (IDM) 120
Qualification Status Qualified
Reference Standard MIL-19500/543
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form PIN/PEG
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON