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K4H511638B-TCB3 | SAMSUNG

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SAMSUNG K4H511638B-TCB3

32MX16 DDR DRAM, 0.7ns, PDSO66


Ordering Info

In Stock: 1

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Access Mode FOUR BANK PAGE BURST
Access Time-Max 0.7
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 166
I/O Type COMMON
Interleaved Burst Length 2,4,8
JESD-30 Code R-PDSO-G66
JESD-609 Code e0
Length 22.22
Memory Density 536870912
Memory IC Type DDR DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 66
Number of Words 33554432
Number of Words Code 32M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70
Operating Temperature-Min 0
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSSOP66,.46
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 2.5
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.2
Sequential Burst Length 2,4,8
Sub Category DRAMs
Supply Voltage-Max (Vsup) 2.7
Supply Voltage-Min (Vsup) 2.3
Supply Voltage-Nom (Vsup) 2.5
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.65
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16