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K4S511633C-YN1H | SAMSUNG

SAMSUNG K4S511633C-YN1H

32MX16 SYNCHRONOUS DRAM, 7ns, PBGA54


Ordering Info

In Stock: 2

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

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Electrical Characteristics

Access Mode FOUR BANK PAGE BURST
Access Time-Max 7
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B54
JESD-609 Code e0
Length 15.5
Memory Density 536870912
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 33554432
Number of Words Code 32M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85
Operating Temperature-Min -25
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 3
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.3
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002
Sub Category DRAMs
Supply Current-Max 0.335
Supply Voltage-Max (Vsup) 3.6
Supply Voltage-Min (Vsup) 2.7
Supply Voltage-Nom (Vsup) 3
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 0.8
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 9.5