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K4S511633C-YN1H | SAMSUNG

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SAMSUNG K4S511633C-YN1H

32MX16 SYNCHRONOUS DRAM, 7ns, PBGA54


Ordering Info

In Stock: 2

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Access Mode FOUR BANK PAGE BURST
Access Time-Max 7
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 100
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PBGA-B54
JESD-609 Code e0
Length 15.5
Memory Density 536870912
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 33554432
Number of Words Code 32M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 85
Operating Temperature-Min -25
Organization 32MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code LFBGA
Package Equivalence Code BGA54,9X9,32
Package Shape RECTANGULAR
Package Style GRID ARRAY, LOW PROFILE, FINE PITCH
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 3
Qualification Status Not Qualified
Refresh Cycles 8192
Seated Height-Max 1.3
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.002
Sub Category DRAMs
Supply Current-Max 0.335
Supply Voltage-Max (Vsup) 3.6
Supply Voltage-Min (Vsup) 2.7
Supply Voltage-Nom (Vsup) 3
Surface Mount YES
Technology CMOS
Temperature Grade OTHER
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form BALL
Terminal Pitch 0.8
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 9.5