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K4S641632H-TC75 | SAMSUNG

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SAMSUNG K4S641632H-TC75

32MX16 SYNCHRONOUS DRAM, 7ns, PBGA54


Ordering Info

In Stock: 58

MOQ: 1

Package Quantity: 1

COO: Korea

Quantity Cost
1 -

Electrical Characteristics

Access Mode FOUR BANK PAGE BURST
Access Time-Max 5.4
Additional Feature AUTO/SELF REFRESH
Clock Frequency-Max (fCLK) 133
I/O Type COMMON
Interleaved Burst Length 1,2,4,8
JESD-30 Code R-PDSO-G54
JESD-609 Code e0
Length 22.22
Memory Density 67108864
Memory IC Type SYNCHRONOUS DRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Ports 1
Number of Terminals 54
Number of Words 4194304
Number of Words Code 4M
Operating Mode SYNCHRONOUS
Operating Temperature-Max 70
Operating Temperature-Min 0
Organization 4MX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP54,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 3.3
Qualification Status Not Qualified
Refresh Cycles 4096
Seated Height-Max 1.2
Sequential Burst Length 1,2,4,8,FP
Standby Current-Max 0.001
Sub Category DRAMs
Supply Current-Max 0.135
Supply Voltage-Max (Vsup) 3.6
Supply Voltage-Min (Vsup) 3
Supply Voltage-Nom (Vsup) 3.3
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Form GULL WING
Terminal Pitch 0.8
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16