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K6R1016V1D-TI10 | SAMSUNG

SAMSUNG K6R1016V1D-TI10

64KX16 STANDARD SRAM, 10ns, PDSO44


Ordering Info

In Stock: 1741

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1-99 $3.50
100+ $1.65


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Electrical Characteristics

Access Time-Max 10
I/O Type COMMON
JESD-30 Code R-PDSO-G44
JESD-609 Code e0
Length 18.41
Memory Density 1048576
Memory IC Type STANDARD SRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 44
Number of Words 65536
Number of Words Code 64K
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85
Operating Temperature-Min -40
Organization 64KX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP44,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 3.3
Qualification Status Not Qualified
Seated Height-Max 1.2
Standby Current-Max 0.005
Standby Voltage-Min 3
Sub Category SRAMs
Supply Current-Max 0.075
Supply Voltage-Max (Vsup) 3.6
Supply Voltage-Min (Vsup) 3
Supply Voltage-Nom (Vsup) 3.3
Surface Mount YES
Technology CMOS
Temperature Grade INDUSTRIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.8
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16