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K6R4016V1D-TC10 | SAMSUNG

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SAMSUNG K6R4016V1D-TC10

256KX16 STANDARD SRAM, 10ns, PDSO44


Ordering Info

In Stock: 2

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Access Time-Max 10
I/O Type COMMON
JESD-30 Code R-PDSO-G44
JESD-609 Code e0
Length 18.41
Memory Density 4194304
Memory IC Type STANDARD SRAM
Memory Width 16
Moisture Sensitivity Level 3
Number of Functions 1
Number of Terminals 44
Number of Words 262144
Number of Words Code 256K
Operating Mode ASYNCHRONOUS
Operating Temperature-Max 70
Operating Temperature-Min 0
Organization 256KX16
Output Characteristics 3-STATE
Package Body Material PLASTIC/EPOXY
Package Code TSOP2
Package Equivalence Code TSOP44,.46,32
Package Shape RECTANGULAR
Package Style SMALL OUTLINE, THIN PROFILE
Parallel/Serial PARALLEL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Supplies 3.3
Qualification Status Not Qualified
Seated Height-Max 1.2
Standby Current-Max 0.005
Standby Voltage-Min 3
Sub Category SRAMs
Supply Current-Max 0.065
Supply Voltage-Max (Vsup) 3.6
Supply Voltage-Min (Vsup) 3
Supply Voltage-Nom (Vsup) 3.3
Surface Mount YES
Technology CMOS
Temperature Grade COMMERCIAL
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Pitch 0.8
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Width 10.16