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LMN200B02-7 | DIODES INC.

DIODES INC. LMN200B02-7

LMN200B02 Series 50 V 200 mA Load Switch PNP Transistor and N-Mosfet - SOT-363


Ordering Info

In Stock: 0

MOQ: 3000

Package Quantity: 3000

HTS Code: 8541.21.0095

ECCN: EAR99

COO: CN

Subject to tariff fees.

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
3000 -

Electrical Characteristics

Additional Feature BUILT IN BIAS RESISTOR
Collector Current-Max (IC) .2
Configuration SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR
DC Current Gain-Min (hFE) 60
DS Breakdown Voltage-Min 60
Drain Current-Max (ID) .115
Drain-source On Resistance-Max 2
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) .2
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
VCEsat-Max .3