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LND150N3 | SUPERTEX

SUPERTEX LND150N3

Small Signal Field-EffectTransistor,0.03AI(D),500V,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-92


Ordering Info

In Stock: 0

MOQ: 54

Package Quantity: 54

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Quantity Cost
54+ $1.14


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Electrical Characteristics

Additional Feature HIGH INPUT IMPEDANCE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500
Drain Current-Max (ID) 0.03
Drain-source On Resistance-Max 1000
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 1
JEDEC-95 Code TO-92
JESD-30 Code O-PBCY-T3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape ROUND
Package Style CYLINDRICAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1
Power Dissipation-Max (Abs) 1
Qualification Status Not Qualified
Sub Category FET General Purpose Power
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position BOTTOM
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON