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Ordering Info
In Stock: 248
MOQ: 1
Lead Time: 2 weeks
Package Quantity: 1
HTS Code: 8541210080
ECCN: EAR99
COO: US
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 1-99 | $5.03 |
| 100-999 | $4.78 |
| 1000+ | $4.55 |
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Electrical Characteristics
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR |
| DS Breakdown Voltage-Min | 20 |
| Drain Current-Max (ID) | .025 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 Code | R-PDSO-G3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 125 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Qualification Status | Not Qualified |
| Surface Mount | YES |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |