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Electrical Characteristics
| Configuration | SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND RESISTOR |
| DS Breakdown Voltage-Min | 20 |
| Drain Current-Max (ID) | .025 |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-92 |
| JESD-30 Code | O-PBCY-T3 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 1 |
| Number of Terminals | 3 |
| Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 125 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | ROUND |
| Package Style | CYLINDRICAL |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | P-CHANNEL |
| Qualification Status | Not Qualified |
| Surface Mount | NO |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Position | BOTTOM |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |