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Electrical Characteristics
| Access Time-Max | 150 |
| Additional Feature | BATTERY BACK-UP; POWER SUPPLY WRITE PROTECTION |
| JESD-30 Code | R-PDIP-T24 |
| JESD-609 Code | e3 |
| Length | 34.545 |
| Memory Density | 16384 |
| Memory IC Type | NON-VOLATILE SRAM MODULE |
| Memory Width | 8 |
| Mixed Memory Type | N/A |
| Moisture Sensitivity Level | NOT APPLICABLE |
| Number of Functions | 1 |
| Number of Ports | 1 |
| Number of Terminals | 24 |
| Number of Words | 2048 |
| Number of Words Code | 2K |
| Operating Mode | ASYNCHRONOUS |
| Operating Temperature-Max | 70 |
| Operating Temperature-Min | 0 |
| Organization | 2KX8 |
| Output Characteristics | 3-STATE |
| Output Enable | YES |
| Package Body Material | PLASTIC/EPOXY |
| Package Code | DIP |
| Package Equivalence Code | DIP24,.6 |
| Package Shape | RECTANGULAR |
| Package Style | IN-LINE |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Power Supplies | 5 |
| Qualification Status | Not Qualified |
| Seated Height-Max | 9.65 |
| Standby Current-Max | 0.003 |
| Sub Category | SRAMs |
| Supply Current-Max | 0.08 |
| Supply Voltage-Max (Vsup) | 5.5 |
| Supply Voltage-Min (Vsup) | 4.75 |
| Supply Voltage-Nom (Vsup) | 5 |
| Surface Mount | NO |
| Technology | CMOS |
| Temperature Grade | COMMERCIAL |
| Terminal Finish | Matte Tin (Sn) |
| Terminal Form | THROUGH-HOLE |
| Terminal Pitch | 2.54 |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Width | 15.24 |