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MBT6429DW1T1G | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MBT6429DW1T1G


Ordering Info

In Stock: 6000 Delivery

MOQ: 3000

Package Quantity: 3000

ECCN: N.E.

COO: CN

Subject to tariff fees.

Quantity Cost
3000-5999 $0.0761
6000+ $0.0708


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Electrical Characteristics

Collector Current-Max (IC) 0.2
Collector-emitter Voltage-Max 45
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 500
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.15
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 100