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ON SEMICONDUCTOR MBT6429DW1T1G
Ordering Info
In Stock: 6000 Delivery
MOQ: 3000
Package Quantity: 3000
ECCN: EAR99
COO: CN
Subject to tariff fees.
*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.
| Quantity | Cost |
|---|---|
| 3000-5999 | $0.1167 |
| 6000+ | $0.1077 |
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Electrical Characteristics
| Collector Current-Max (IC) | 0.2 |
| Collector-emitter Voltage-Max | 45 |
| Configuration | SEPARATE, 2 ELEMENTS |
| DC Current Gain-Min (hFE) | 500 |
| JESD-30 Code | R-PDSO-G6 |
| JESD-609 Code | e3 |
| Moisture Sensitivity Level | 1 |
| Number of Elements | 2 |
| Number of Terminals | 6 |
| Operating Temperature-Max | 150 |
| Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 |
| Polarity/Channel Type | NPN |
| Power Dissipation-Max (Abs) | 0.15 |
| Qualification Status | Not Qualified |
| Sub Category | Other Transistors |
| Surface Mount | YES |
| Terminal Finish | Tin (Sn) |
| Terminal Form | GULL WING |
| Terminal Position | DUAL |
| Time@Peak Reflow Temperature-Max (s) | 40 |
| Transistor Application | AMPLIFIER |
| Transistor Element Material | SILICON |
| Transition Frequency-Nom (fT) | 100 |