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MGSF3441VT1 | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MGSF3441VT1

Small Signal Field-Effect Transistor, 3.3AI(D),20V,1-Element, P-Channel,Silicon,Metal-oxideSemiconductor FET


Ordering Info

In Stock: 1106

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20
Drain Current-Max (Abs) (ID) 3.3
Drain Current-Max (ID) 3.3
Drain-source On Resistance-Max 0.09
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e0
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON