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MJD112-1 | ON SEMICONDUCTOR

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ON SEMICONDUCTOR MJD112-1

Power Bipolar Transistor, 2A I(C),100VV(BR)CEO,1-Element, NPN, Silicon,Plastic/Epoxy, 3Pin


Ordering Info

In Stock: 47

MOQ: 1

Package Quantity: 1

Quantity Cost
1 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 2
Collector-emitter Voltage-Max 100
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25