Request Quote













Request Quote


MJD112-1 | ON SEMICONDUCTOR

ON SEMICONDUCTOR MJD112-1

Power Bipolar Transistor, 2A I(C),100VV(BR)CEO,1-Element, NPN, Silicon,Plastic/Epoxy, 3Pin


Ordering Info

In Stock: 47

MOQ: 1

Package Quantity: 1

*Product Country of Origin (COO) information may be unavailable at the time of order placement. Buyer acknowledges that additional duties, tariffs, or import fees may be assessed based on the actual COO once determined.

Quantity Cost
1 -

Electrical Characteristics

Case Connection COLLECTOR
Collector Current-Max (IC) 2
Collector-emitter Voltage-Max 100
Configuration DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
DC Current Gain-Min (hFE) 200
JESD-30 Code R-PSIP-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 20
Qualification Status Not Qualified
Sub Category Other Transistors
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 25